Abstract

This paper reports on the fabrication and characterization of ultra small pressure sensors with individual single-walled carbon nanotube (SWNT) field effect transistors (CNFETs) as strain gauges. The smallest piezoresistive pressure sensor with a membrane diameter of d~40 mum is fabricated and characterized. This miniaturization is made possible due to the nanoscaled size, electronic properties, and high piezoresistive gauge factors (GF) of SWNTs and is currently limited by the membrane fabrication capabilities using a 200 mum thick Si wafer. In summary the sensor performance is: gauge factor: ~450 to 700 (strain dependent), sensitivity: -54 pA/mbar (V ds =200 mV), resolution: 15mbar, power consumption: ~100nW.

Keywords:
Gauge factor Piezoresistive effect Miniaturization Fabrication Carbon nanotube Materials science Strain gauge Wafer Pressure sensor Nanotechnology Optoelectronics Transistor Field-effect transistor Electrical engineering Composite material Mechanical engineering Engineering

Metrics

22
Cited By
0.47
FWCI (Field Weighted Citation Impact)
13
Refs
0.62
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Carbon Nanotubes in Composites
Physical Sciences →  Materials Science →  Materials Chemistry
Mechanical and Optical Resonators
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advanced MEMS and NEMS Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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