Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

R. Stoklas; D. Gregušová; Š. Gaži; J. Novák; P. Kordoš

doi:10.1116/1.3523362

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Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

R. Stoklas D. Gregušová Š. Gaži J. Novák P. Kordoš

Year: 2011 Journal: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Vol: 29 (1)Pages: 01A809-01A809

DOI: 10.1116/1.3523362

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Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation R. Stoklas, D. Gregušová, Š. Gaži, J. Novák, P. Kordoš; Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering. J. Vac. Sci. Technol. B 1 January 2011; 29 (1): 01A809. https://doi.org/10.1116/1.3523362 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology B Search Advanced Search |Citation Search

Keywords:

Materials science Optoelectronics Heterojunction Sputter deposition Sputtering Insulator (electricity) Wide-bandgap semiconductor Semiconductor Field-effect transistor Transistor Cavity magnetron Thin film Voltage Nanotechnology Electrical engineering

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

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