Growth modes of overlayers of Se deposited on Cu(111) surfaces

Seiichi Nagashima; Eisaku Fukuchi; Iwao Ogura

doi:10.1016/0169-4332(91)90305-4

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Growth modes of overlayers of Se deposited on Cu(111) surfaces

Seiichi Nagashima Eisaku Fukuchi Iwao Ogura

Year: 1991 Journal: Applied Surface Science Vol: 48-49 Pages: 44-49 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(91)90305-4

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Keywords:

Overlayer Materials science Auger electron spectroscopy Transmission electron microscopy Scanning electron microscope Mica Crystallography Scanning tunneling microscope Scanning transmission electron microscopy Epitaxy Substrate (aquarium) Analytical Chemistry (journal) Chemistry Nanotechnology Metallurgy Composite material Layer (electronics)

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth modes of overlayers of Se deposited on Cu(111) surfaces

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