<title>Photoconductive measurements on P-type 6H-SiC</title>

Abstract

The optoelectronic properties of 6-H silicon carbide (6H-SiC) were investigated using lateral and vertical photoconductive switches. We report the measurement of photovoltaic and photoconductive effects for both geometries and at several wavelengths near the 6H-SiC absorption edge. The carrier lifetime in p-type 6H-SiC is also reported. Although the devices possess dark resistances on the order of 10 (Omega) , the switching efficiency of the vertical switches approached 32 percent, while the resistance of the lateral devices could be reduced by 50 percent with 200 (mu) J of laser radiation at (lambda) equals 337 nm. In addition, we measured photoconductivity in the vertical switches with a device static powers dissipation exceeding 11 Watts. Although the device was glowing from the high level of dc power being dissipated, only the switch mount was damaged. 6H-SiC is indeed a high-temperature optoelectronic material.