JOURNAL ARTICLE

High-power visible semiconductor lasers

R.S. GeelsDavid WelchD. P. BourD.W. TreatRoss D. Bringans

Year: 1994 Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 2115 Pages: 250-250   Publisher: SPIE

Abstract

High power visible semiconductor laser diodes are reported at wavelengths ranging from 620 nm to 690 nm. Broad area laser diodes exhibit peak cw output powers of 3.8 W from a 250 micrometers aperture at 688 nm and > 1 W cw at 636 nm from a 100 micrometers aperture. Monolithic 1 cm arrays with a 24% filling factor provide output powers of 30 W cw at 687 nm. Single mode lasers in the 620 nm wavelength band emit > 50 mW and operate at temperatures up to 80 degree(s)C.

Keywords:
Semiconductor laser theory Optoelectronics Laser Semiconductor Materials science Power (physics) Optics Physics

Metrics

2
Cited By
0.89
FWCI (Field Weighted Citation Impact)
0
Refs
0.74
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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