III–V semiconductor nanowires for optoelectronic device applications

Hannah J. Joyce; Qiang Gao; Hark Hoe Tan; C. Jagadish; Yong Kim; Jin Zou; Leigh M. Smith; Howard E. Jackson; J.M. Yarrison-Rice; Patrick Parkinson; Michael B. Johnston

doi:10.1016/j.pquantelec.2011.03.002

JOURNAL ARTICLE

III–V semiconductor nanowires for optoelectronic device applications

Hannah J. Joyce Qiang Gao Hark Hoe Tan C. Jagadish Yong Kim Jin Zou Leigh M. Smith Howard E. Jackson J.M. Yarrison-Rice Patrick Parkinson Michael B. Johnston

Year: 2011 Journal: Progress in Quantum Electronics Vol: 35 (2-3)Pages: 23-75 Publisher: Elsevier BV

DOI: 10.1016/j.pquantelec.2011.03.002

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Keywords:

Nanowire Heterojunction Semiconductor Materials science Photoluminescence Optoelectronics Nanotechnology Terahertz radiation Quantum dot Engineering physics Physics

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

III–V semiconductor nanowires for optoelectronic device applications

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