Polarization of photoluminescence from strained InGaAs quantum wires on GaAs substrates

Kōichi Inoue

doi:10.1016/s0022-2313(99)00417-2

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Polarization of photoluminescence from strained InGaAs quantum wires on GaAs substrates

Kōichi Inoue

Year: 2000 Journal: Journal of Luminescence Vol: 87-89 Pages: 399-401 Publisher: Elsevier BV

DOI: 10.1016/s0022-2313(99)00417-2

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Keywords:

Photoluminescence Polarization (electrochemistry) Materials science Optoelectronics Gallium arsenide Quantum dot Condensed matter physics Wave function Chemistry Physics Atomic physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Polarization of photoluminescence from strained InGaAs quantum wires on GaAs substrates

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