Structural, optical and electrical properties of indium–molybdenum oxide thin films prepared by spray pyrolysis

Abstract

Abstract Molybdenum doped indium oxide (IO) thin films were deposited on the Coring F1737 glass substrates at 400 °C by spray pyrolysis technique. The Mo doping was varied between 0 and 4 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In 2 O 3 with a strongest orientation along (222) for 0.5 at.% Mo, which is shifted to (400) plane when the Mo doping is increased to ≥1.2 at.%. The films deposited with 0.5 at.% Mo showed high mobility of ∼90 cm 2 /Vs, resistivity of ∼6.8 × 10 −4 Ω cm and carrier concentration of ∼1.01 × 10 20 cm −3 with >∼73% transmittance in the visible range between 500 and 800 nm. The transmittance is well extended into near infrared region.