Magnetoresistance in amorphous TbFeCo films with perpendicular magnetic anisotropy

Abstract

The magnetoresistance of TbFeCo amorphous films with perpendicular magnetic anisotropy have been studied at room temperature. TbFeCo films within a thickness range of 50–300nm were deposited by a dc-magnetron sputtering. Sharp change in magnetoresistance (MR) has been found at the magnetization reversal region. The MR ratio is sensitively dependent on the film thickness and the magnetic domain pattern. Films with smaller domain pattern show higher MR ratio. The MR ratio is decreased with the decrease in film thickness. It may be considered that the observed MR is contributed from the domain wall. The maximum MR ratio is about 3.7% for the film with thickness of 300nm at room temperature. No MR has been found when the magnetic field is applied parallel to the film plane.