JOURNAL ARTICLE
Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells
Chih-Feng LuChi‐Feng HuangDong-Ming YehYung‐Sheng ChenWen-Yu ShiaoC. C. Yang
Year: 2007 Vol: 41 Pages: 154-155
Abstract
A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.
Keywords:
Optoelectronics Phosphor Light-emitting diode Materials science Quantum well Diode White light Indium Indium gallium nitride Metalorganic vapour phase epitaxy Gallium nitride Wide-bandgap semiconductor Optics Laser Layer (electronics) Physics Nanotechnology Epitaxy
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Photocathodes and Microchannel Plates
Physical Sciences → Engineering → Biomedical Engineering
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