Radiation effects in silicon carbide: high energy cascades and damage accumulation at high temperature

T. Dı́az de la Rubia; J.M. Perlado; M. Tobin

doi:10.1016/s0022-3115(96)00206-1

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Radiation effects in silicon carbide: high energy cascades and damage accumulation at high temperature

T. Dı́az de la Rubia J.M. Perlado M. Tobin

Year: 1996 Journal: Journal of Nuclear Materials Vol: 233-237 Pages: 1096-1101 Publisher: Elsevier BV

DOI: 10.1016/s0022-3115(96)00206-1

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Keywords:

Radiation damage Silicon carbide Cascade Molecular dynamics Anisotropy Fusion Materials science Melting temperature Silicon Chemical physics Lattice (music) Inertial confinement fusion Radiation Molecular physics Chemistry Nuclear physics Physics Optoelectronics Composite material Plasma Optics Computational chemistry

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Topics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Radiation effects in silicon carbide: high energy cascades and damage accumulation at high temperature

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Citation History

Topics

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