The renewed interest in millimeter-wave systems in recent years has stimulated development effort of various solid-state devices. As a result, millimeter-wave IMPATT and Gunn device technologies are now well established for systems applications and the GaAs FET technology has been progressing rapidly extending its upper frequency range to beyond 70 GHz. This paper presents an overview of the current status of millimeter-wave active solid-state devices. The design, material, and fabrication of each device are briefly described and current performances of these devices are reported.
S.A. RosenauLiang ChengWeikang ZhangB. H. DengWeiying LiChia‐Chan ChangPei-Ling HsuR. P. HsiaFan JiangsC. W. DomierNeville C. Luhmann