Effect of Substrate Bias on Properties of RF-Sputtered Cr–SiO Films

Abstract

Properties of rf-sputtered Cr-SiO cermet films have been studied as a function of rf substrate bias. Films with five orders-of-magnitude change in electrical resistivity have been deposited from one Cr-SiO(50:50 wt%) target by changing the substrate bias. Resistivities of about 200 Ω · cm at 5% bias and about 2 × 10 ⁻³ Ω · cm at 20% bias have been obtained.