Abstract We have used ellipsometry to measure the glass transition temperature (T g ) of ultra‐thin films of polystyrene (PS) (less than 20 nm thick) obtained by spin‐casting from solution onto silicon substrates. We find that T g in these ultra‐thin films is depressed from the bulk value in qualitative accord with our earlier results on thicker films of PS. In films as thin as 8 nm, the depression from the bulk value of T g is 35 K. We have also prepared ultra‐thins by grafting PS‐COOH on the native oxide of Si and by spin‐casting PS‐COOH onto Si. Here we have been able to measure the T g of 5‐nm films in which we find a T g depression of 10 K. We tentatively ascribe the smaller value of T g depression for these grafted chains to the constraining effect of the anchor.
A. R. C. BaljonS. WilliamsН. К. БалабаевF. PaansD. HudzinskyyAlexey V. Lyulin
Rintaro InoueToshiji KanayaTsukasa MiyazakiKoji NishidaItaru TsukushiKaoru Shibata
Yves GrohensJavier SacristánLoïc HamonHelmut ReineckeCarmen MijangosJean‐Michel Guenet