JOURNAL ARTICLE

Local structure of indium oxynitride from x-ray absorption spectroscopy

Abstract

Synchrotron x-ray absorption near edge structures (XANES) measurements of In L3 edge is used in conjunction with first principles calculations to characterize rf magnetron sputtered indium oxynitride at different O contents. Good agreement between the measured and the independently calculated spectra are obtained. Calculations show that the XANES spectra of this alloy are sensitive to the coordination numbers of the In atoms, i.e., fourfold for indium nitride-like structures and sixfold for indium oxide-like structures, but not to the substitution of nearest neighbor N by O or vice versa.

Keywords:
XANES Indium Indium nitride Extended X-ray absorption fine structure Materials science Nitride Spectral line Absorption spectroscopy Synchrotron Oxide Absorption (acoustics) X-ray absorption spectroscopy X-ray spectroscopy Analytical Chemistry (journal) Spectroscopy Chemistry Optoelectronics Optics Physics Nanotechnology Metallurgy

Metrics

40
Cited By
2.88
FWCI (Field Weighted Citation Impact)
19
Refs
0.92
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Electron and X-Ray Spectroscopy Techniques
Physical Sciences →  Materials Science →  Surfaces, Coatings and Films
© 2026 ScienceGate Book Chapters — All rights reserved.