Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxy

Abstract

Indium donor doping of (001), (111) and (211) oriented CdTe layers is performed by MBE (with a Cd overpressure in the case of (001) orientation). For (001) growth the role of the Cd overpressure on the growth characteristics and the doping properties is discussed. For tilted (111) orientation (misoriented a few degrees around the [110] axis) as well as for the (211) orientation, growth temperature as low as 240°C yields untwinned doped layers. Uniform dopings, in the 1016–1018 cm-3 range, are reproducible with ≈ 100% doping efficiency and the doped layers show PL spectra dominated by the D0X and DAP emissions.