CdSe/ZnSe strained layer superlattices grown on InP

Y. Nabetani; Hideaki Takahashi; Teruhisa Kato; Takashi Matsumoto

doi:10.1016/s0022-0248(98)80287-x

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CdSe/ZnSe strained layer superlattices grown on InP

Y. Nabetani Hideaki Takahashi Teruhisa Kato Takashi Matsumoto

Year: 1998 Journal: Journal of Crystal Growth Vol: 184-185 Pages: 26-30 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)80287-x

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Keywords:

Superlattice Photoluminescence Molecular beam epitaxy Substrate (aquarium) Diffraction Materials science Optoelectronics Layer (electronics) Epitaxy X-ray crystallography Crystallography Chemistry Optics Nanotechnology Physics Geology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

CdSe/ZnSe strained layer superlattices grown on InP

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