JOURNAL ARTICLE
GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam Epitaxy
Takao WahoShigeo OgawaSusumu Maruyama
Year: 1977 Journal: Japanese Journal of Applied Physics Vol: 16 (10)Pages: 1875-1876 Publisher: Institute of Physics
Keywords:
Molecular beam epitaxy Materials science Epitaxy Crystallography Analytical Chemistry (journal) Chemistry Nanotechnology
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55
Cited By
0.99
FWCI (Field Weighted Citation Impact)
0
Refs
0.71
Citation Normalized Percentile
Is in top 1%
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
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