Self-assembly on (111)-oriented III-V surfaces

Paul J. Simmonds; Minjoo Larry Lee

doi:10.1063/1.3640501

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Self-assembly on (111)-oriented III-V surfaces

Paul J. Simmonds Minjoo Larry Lee

Year: 2011 Journal: Applied Physics Letters Vol: 99 (12) Publisher: American Institute of Physics

DOI: 10.1063/1.3640501

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Abstract

We demonstrate the self-assembly of tensile strained GaP into three-dimensional dots on GaAs(111)A. Size and areal density of the dislocation-free GaP dots are readily tunable with both substrate temperature and deposition thickness. GaP dot growth obeys island scaling theory, allowing us to predict dot size distributions a priori.

Keywords:

Materials science Scaling Quantum dot Substrate (aquarium) Dislocation Deposition (geology) Condensed matter physics Self-assembly Scaling law Nanotechnology Composite material Physics Geometry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Self-assembly on (111)-oriented III-V surfaces

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