Capacitance‐voltage measurements in InAs‐GaAs self‐assembled quantum dots

Abstract

We report on an investigation of capacitance-voltage spectroscopy of electron-hole dynamics in InAs/GaAs self-assembled quantum dots (QDs) under varied reverse bias, and a study of the influence of holes on this process exerted by the Coulomb interactions. The time constant of the electron transport was estimated by making use of the frequency dependence of the capacitance increase due to the InAs dots. The high values found for the tunnelling times suggest that this process is very sensitive to hole accumulation into the dots. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)