Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method
Abstract
sn this mteril prodution reserhD undoped nd fEdoped nnostrutured (lms re frited on glss surfes y sve methodF he struturlD optil nd morphologil properties of the (lms re exmined vi snning eletron mirosopyD Evis spetrophotometry nd Ery di'rtion nlysisF nning eletron mirosopy nlysis reveled tht fEdoping onentrtion in)uenes the size of the thin (lm9s nnoprtilesF E ry di'rtion results showed tht ll of the thin (lms re in fe entered ui strutureF yptil studiesD in the room tempertureD reveled tht the optil nd gp of the (lms inreses s fEdoping onentrtion is inresedF he interept vlues on the energy xis in the rnge of IFVT e nd PFIP e for I7 nd V7 fEdoped (lms respetivelyF es resultD it is onluded tht the struturlD optil nd morphologil properties of the frited thin (lms re diretly depend on the f doping rtioF hysX IHFIPTWQGehysoleFIPTFUTQ egX TIFHSF!D TIFHSFpD TVFSSFvn
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