Influence of the interface structure on the barrier height of homogeneous Schottky contacts

R. F. Schmitsdorf; Winfried Mönch

doi:10.1007/s100510050634

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Influence of the interface structure on the barrier height of homogeneous Schottky contacts

R. F. Schmitsdorf Winfried Mönch

Year: 1999 Journal: The European Physical Journal B Vol: 7 (3)Pages: 457-466 Publisher: Springer Science+Business Media

DOI: 10.1007/s100510050634

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Keywords:

Thermionic emission Materials science Schottky barrier Condensed matter physics Schottky diode Homogeneous Schottky effect Dipole Solid-state physics Semiconductor Atmospheric temperature range Optoelectronics Thermodynamics Chemistry Physics Electron Diode

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Molecular Junctions and Nanostructures

Physical Sciences → Engineering → Electrical and Electronic Engineering

Influence of the interface structure on the barrier height of homogeneous Schottky contacts

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