JOURNAL ARTICLE
CdTe photoluminescence in HgTe-CdTe superlattices
Bernard J. FeldmanM. L. WrogeD. J. Leopold
Year: 1987 Journal: Journal of Applied Physics Vol: 62 (4)Pages: 1516-1518 Publisher: American Institute of Physics
Abstract
We report photoluminescence in HgTe-CdTe superlattices that originates in the CdTe layers. We see a near-band-gap line at 1.493 eV, which demonstrates that strain and Hg-Cd substitutional diffusion are small in the CdTe layers. In addition, a deep-level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
Keywords:
Cadmium telluride photovoltaics Photoluminescence Superlattice Materials science Dislocation Optoelectronics Condensed matter physics Band gap Line (geometry) Physics
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14
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0.64
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Topics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
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