Characterization of Electrodeposited CuInSe₂Thin Films for Photovoltaic and Photoelectrochemical Applications

Abstract

Abstract CuInSe2 (CIS) thin films were deposited galvanostatically as well as potentiostatically by an aqueous method. The films were characterized with respect to their structural, opto-electronic and photoelectrochemical properties for application in photovoltaic and photoelectrochemical cells. The film properties depend on parameters like electrode potential, current density, deposition temperature and post-deposition heat treatment. The photoelectrochemical characterization of the film showed that electrodeposited CIS films may be used as photodiodes for hydrogen production by a photocatalytic method. The carrier concentration and flatband potential were determined from C-V measurement, and conductivity type was determined from photoelectrochemical characterization. The annealed films showed NA = 6×l018 cm× and flat band potential VB = 0.15 eV.