Atomic Layer Epitaxy of ZnSe-(CdSe)_m(ZnSe)_n Short-Period Superlattice Multiple Quantum Wells

Abstract

Atomic-layer epitaxy growth of ZnSe-(CdSe) m (ZnSe) n short-period superlattice multiple quantum wells (SPSQWs) has been investigated. High crystalline quality has been achieved in this system by the introduction of an ultra-short-period (CdSe) m (ZnSe) n superlattice in the well to replace a ZnCdSe alloy, due to the success in solving problems associated with mismatch dislocations and alloying. Material characterizations have been performed by X-ray diffraction and photoluminescence. The critical thickness of CdSe on ZnSe has been determined to be less than four monolayers.