JOURNAL ARTICLE

Indium tin oxide spreading layers for AlGaInP visible LEDs

D. V. MorganI M Al-OfiY.H. Aliyu

Year: 2000 Journal:   Semiconductor Science and Technology Vol: 15 (1)Pages: 67-72   Publisher: IOP Publishing

Abstract

In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a basis for this comparison test devices have been fabricated both with and without any ITO spreading layers and for comparison with an alternative GaP spreading layer. These measurements confirm that ITO is an effective alternative to the GaP structure with greater potential for applications in low-cost LED arrays.

Keywords:
Light-emitting diode Optoelectronics Indium tin oxide Indium Diode Layer (electronics) Materials science Tin Oxide Nanotechnology Metallurgy

Metrics

28
Cited By
0.47
FWCI (Field Weighted Citation Impact)
10
Refs
0.63
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
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