Cheol Jin LeeHoon JangE. R. ParkEunseo KangSeung-Hoon LeeS. J. Noh
Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l m x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200°C, following a low-temperature annealing in oxygen at 450°C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers. Keywords: PztThin FilmsOxygen-plasmaFatigueLow-temperature Processing
Cheol Jin LeeHwan-Yoon JangE. R. ParkE. K. KangS. K. LeeS. J. Noh
Hanbin JangS. K. LeeCheol Jin LeeS. J. NohW. I. Lee
Eung Kil KangHyuk Kyoo JangSung Kyun LeeEung Ryul ParkCheol Jin LeeKyung Min KimSeung Jeong NohSeung-Jin Yeom
S. S. DanaKonstantin EtzoldJ. B. Clabes
Hyuk Kyoo JangCheol Jin LeeSeung Jeong Noh