Photoluminescence in ZnSe-based quantum well wire structures

Abstract

We have fabricated quantum well wire structures by using electron beam lithography and reactive ion etching techniques on (Zn,Cd)Se/Zn(S,Se) multiple quantum well structures. Photoluminescence efficiencies have been studied as a function of the wire width (down to about 400 Å), and temperature. The results indicate that the sidewall surfaces exposed during the dry etching play an important role in providing nonradiative centers for the optically injected carriers, strongly diminishing the radiative efficiencies in the smallest structures.