Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

Shanzhong Wang; Shengwu Xie; Pang Qian-Jun; Hang Zheng; Yuxing Xia; Rongbin Ji; Yan Wu; Li He; Zuoming Zhu; Guohua Li; Zhaoping Wang

doi:10.1016/s0022-0248(00)00881-2

JOURNAL ARTICLE

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

Shanzhong Wang Shengwu Xie Pang Qian-Jun Hang Zheng Yuxing Xia Rongbin Ji Yan Wu Li He Zuoming Zhu Guohua Li Zhaoping Wang

Year: 2000 Journal: Journal of Crystal Growth Vol: 220 (4)Pages: 548-553 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(00)00881-2

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Keywords:

Photoluminescence Exciton Full width at half maximum Quenching (fluorescence) Molecular beam epitaxy Luminescence Chemistry Doping Excitation Atomic physics Analytical Chemistry (journal) Materials science Epitaxy Optoelectronics Condensed matter physics Physics Optics Fluorescence

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

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