Fabrication of Suspended Silicon Nanowire Arrays

Abstract

Abstract A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer‐level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single‐crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field‐effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.