JOURNAL ARTICLE

A high-sensitivity integrated-circuit capacitive pressure transducer

Wen H. KoMinhang BaoYeun-Ding Hong

Year: 1982 Journal:   IEEE Transactions on Electron Devices Vol: 29 (1)Pages: 48-56   Publisher: Institute of Electrical and Electronics Engineers

Abstract

A high-sensitivity capacitive pressure transducer with active processing circuit on the chip has been demonstrated and evaluated. The transducer configuration has been optimized by computer-aided design to achieve highest sensitivity for a given maximum dimension. The measured sensitivity of the devices is in the range of 50-150 µV/ V . mmHg, which is approximately one order of magnitude higher than the sensitivity of the piezoresistive pressure transducer of comparable size. Theoretical analysis also shows that a sensitivity on the order of 1000 µV/V . mmHg is also possible using the capacitive approach if the dimension of the device can be enlarged and the full scale pressure range is lowered. Other characteristics of the devices have been investigated and are presented.

Keywords:
Transducer Sensitivity (control systems) Capacitive sensing Pressure sensor Piezoresistive effect Materials science Pressure measurement Acoustics Chip Electronic engineering Electrical engineering Optoelectronics Engineering Physics Mechanical engineering

Metrics

136
Cited By
3.66
FWCI (Field Weighted Citation Impact)
13
Refs
0.94
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Advanced MEMS and NEMS Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
3D IC and TSV technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electrical and Thermal Properties of Materials
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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