Doping in silicon nanostructures

Abstract

Abstract We report on an ab initio study of the structural, electronic and optical properties of boron and phosphorous doped silicon nanocrystals. The scaling with the Si‐nanocrystal size is investigated for both the neutral formation energies (FE) and the impurity activation energies. Both these energies scale with the nanocrystal inverse radius. The optical properties reveal the existence of new absorption peaks in the low energy region related to the presence of the impurity. The effects of B and P co‐doping show that the formation energies are always smaller than those of the corresponding single‐doped cases due to both carriers compensation and minor structural distortion. Moreover in the case of co‐doping the electronic and optical properties show a strong reduction of the band gap with respect to the pure silicon nanocrystals that makes possible to engineer the photoluminescence properties of silicon nanocrystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)