Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

W.-X. Ni; K. B. Joelsson; Congju Du; Г. Позина; I. A. Buyanova; Weimin Chen; G. V. Hansson; B. Ḿonemar

doi:10.1016/s0040-6090(98)00477-5

ScienceGate Book Chapters

JOURNAL ARTICLE

Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

W.-X. Ni K. B. Joelsson Congju Du Г. Позина I. A. Buyanova Weimin Chen G. V. Hansson B. Ḿonemar

Year: 1998 Journal: Thin Solid Films Vol: 321 (1-2)Pages: 223-227 Publisher: Elsevier BV

DOI: 10.1016/s0040-6090(98)00477-5

Get Full-Text PDF Get Analytical Report

Keywords:

Luminescence Electroluminescence Doping Molecular beam epitaxy Materials science Optoelectronics Epitaxy Evaporation Analytical Chemistry (journal) Layer (electronics) Chemistry Nanotechnology

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.11

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

Metrics

Citation History

Topics

Related Documents

Nonisomorphic ErF3 layers on Si(111) substrates grown by molecular beam epitaxy

Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxy

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy