JOURNAL ARTICLE
7.4: Invited Paper : High‐Efficiency Inverted Quantum‐dot Light Emitting Diodes for Display
Year: 2014 Journal: SID Symposium Digest of Technical Papers Vol: 45 (1)Pages: 67-70 Publisher: Wiley
Abstract
Abstract We report the state‐of‐art technologies of quantum‐dot light‐emitting diodes, focused on the current and power efficiencies. And our recent results on QLEDs are also added. A high‐efficiency inverted green quantum‐dot light emitting diodes (QLEDs) was demonstrated in ADRC using stacked electron transporting layer (ETL), exhibiting maximum current efficiency of 28.29 cd/A and power efficiency of 22.11 lm/W, respectively. The additional ETL layer could improve the device performance by around 3 times compare to that of a QLED with single ETL.
Keywords:
Quantum dot Optoelectronics Diode Light-emitting diode Quantum efficiency Materials science Layer (electronics) Power (physics) Current (fluid) Physics Nanotechnology
Metrics
8
Cited By
0.97
FWCI (Field Weighted Citation Impact)
26
Refs
0.73
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Quantum Dots Synthesis And Properties
Physical Sciences → Materials Science → Materials Chemistry
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
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