Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Abstract

GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.