Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

Yaqiong Wang; S. W. Liu; Xiao Wei Sun; Jun Zhao; Gregory K. L. Goh; Quang Vinh Vu; H.Y. Yu

doi:10.1007/s10971-010-2256-z

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Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

Yaqiong Wang S. W. Liu Xiao Wei Sun Jun Zhao Gregory K. L. Goh Quang Vinh Vu H.Y. Yu

Year: 2010 Journal: Journal of Sol-Gel Science and Technology Vol: 55 (3)Pages: 322-327 Publisher: Springer Science+Business Media

DOI: 10.1007/s10971-010-2256-z

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Keywords:

Thin-film transistor Materials science Annealing (glass) Amorphous solid Thin film Nanocrystalline material Threshold voltage Optoelectronics Analytical Chemistry (journal) Transistor Nanotechnology Layer (electronics) Composite material Voltage Crystallography Electrical engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

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