Single-electron transistor in strained Si/SiGe heterostructures

Thomas Berer; D. Pachinger; G. Pillwein; M. Mühlberger; Herbert Lichtenberger; G. Brunthaler; F. Schäffler

doi:10.1016/j.physe.2006.03.016

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Single-electron transistor in strained Si/SiGe heterostructures

Thomas Berer D. Pachinger G. Pillwein M. Mühlberger Herbert Lichtenberger G. Brunthaler F. Schäffler

Year: 2006 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 34 (1-2)Pages: 456-459 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2006.03.016

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Keywords:

Heterojunction Optoelectronics Materials science Coulomb blockade Transistor Schottky diode Silicon Quantum dot Electron-beam lithography Fermi gas Quantum well Doping Schottky barrier Electron Voltage Nanotechnology Electrical engineering Physics Resist Optics Engineering Diode

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Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Single-electron transistor in strained Si/SiGe heterostructures

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