JOURNAL ARTICLE

V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

Huan‐You WangWang Xian-chunQiaolai TanXiaohua Zeng

Year: 2013 Journal:   Materials Science in Semiconductor Processing Vol: 29 Pages: 112-116   Publisher: Elsevier BV
Keywords:
Materials science Metalorganic vapour phase epitaxy Stacking Optoelectronics Chemical vapor deposition Quantum efficiency Sapphire Light-emitting diode Epitaxy Laser Optics Layer (electronics) Nanotechnology

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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
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