V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

Huan‐You Wang; Wang Xian-chun; Qiaolai Tan; Xiaohua Zeng

doi:10.1016/j.mssp.2013.11.019

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V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

Huan‐You Wang Wang Xian-chun Qiaolai Tan Xiaohua Zeng

Year: 2013 Journal: Materials Science in Semiconductor Processing Vol: 29 Pages: 112-116 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2013.11.019

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Keywords:

Materials science Metalorganic vapour phase epitaxy Stacking Optoelectronics Chemical vapor deposition Quantum efficiency Sapphire Light-emitting diode Epitaxy Laser Optics Layer (electronics) Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

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