HV silicon-gate MOS integrated circuit for driving piezoelectric tactile displays

Krishna C. Saraswat; J.D. Meindl

doi:10.1109/isscc.1974.1155282

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HV silicon-gate MOS integrated circuit for driving piezoelectric tactile displays

Krishna C. Saraswat J.D. Meindl

Year: 1974 Vol: 15 Pages: 164-165

DOI: 10.1109/isscc.1974.1155282

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Abstract

A 180-V Si-gate MOS transistor using standard MOS LSI technology and capable of driving piezoelectric tactile displays has been developed. A novel theory predicts accurately walkout of the transistor's high-voltage junction breakdown.

Keywords:

Materials science Transistor Piezoelectricity Silicon Optoelectronics Tactile sensor Voltage Electrical engineering Tactile display Electronic engineering Engineering Acoustics Computer science Physics Composite material

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Neuroscience and Neural Engineering

Life Sciences → Neuroscience → Cellular and Molecular Neuroscience

CCD and CMOS Imaging Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

HV silicon-gate MOS integrated circuit for driving piezoelectric tactile displays

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