0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

T. Enoki; Hiroshi Itô; Kenji Ikuta; Yohtaro Umeda; Y. Ishii

doi:10.1002/(sici)1098-2760(19960220)11:3<135::aid-mop7>3.0.co;2-m

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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

T. Enoki Hiroshi Itô Kenji Ikuta Yohtaro Umeda Y. Ishii

Year: 1996 Journal: Microwave and Optical Technology Letters Vol: 11 (3)Pages: 135-139 Publisher: Wiley

DOI: 10.1002/(sici)1098-2760(19960220)11:3<135::aid-mop7>3.0.co;2-m

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Abstract

High-performance InAlAs/InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP-recess-etch stopper. Recess-depth control is improved, and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps/gate is achieved with these HEMTs. © 1996 John Wiley & Sons, Inc.

Keywords:

Metalorganic vapour phase epitaxy Optoelectronics Materials science Ring oscillator Electrical engineering Nanotechnology Engineering Layer (electronics) Epitaxy CMOS

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

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