Fast anisotropic etching of silicon in an inductively coupled plasma reactor

Andrew Perry; R. W. Boswell

doi:10.1063/1.102127

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JOURNAL ARTICLE

Fast anisotropic etching of silicon in an inductively coupled plasma reactor

Andrew Perry R. W. Boswell

Year: 1989 Journal: Applied Physics Letters Vol: 55 (2)Pages: 148-150 Publisher: American Institute of Physics

DOI: 10.1063/1.102127

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Abstract

A 13.56 MHz rf inductively coupled diffusion plasma confined by a weak magnetic field is shown to produce high etch rates and high plasma densities. With a substrate bias of −160 V and 1 mTorr of pure SF6, silicon has been etched anisotropically at a rate of 0.7 μm min−1 with a selectivity to SiO2 of about 5.

Keywords:

Inductively coupled plasma Silicon Plasma Substrate (aquarium) Etching (microfabrication) Materials science Diffusion Torr Plasma etching Analytical Chemistry (journal) Optoelectronics Chemistry Nanotechnology

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Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Fast anisotropic etching of silicon in an inductively coupled plasma reactor

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