Atomic defects generated by hydrogen on Si(110) surface as revealed by scanning tunneling microscopy

Masamichi Yoshimura; Mitsumasa Odawara; Kazuyuki Ueda

doi:10.1016/s0921-5107(01)00961-8

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Atomic defects generated by hydrogen on Si(110) surface as revealed by scanning tunneling microscopy

Masamichi Yoshimura Mitsumasa Odawara Kazuyuki Ueda

Year: 2002 Journal: Materials Science and Engineering B Vol: 91-92 Pages: 120-122 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(01)00961-8

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Keywords:

Scanning tunneling microscope Hydrogen Adsorption Atomic units Materials science Saturation (graph theory) Quantum tunnelling Crystallography Chemical physics Chemistry Nanotechnology Physical chemistry Physics Optoelectronics

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Force Microscopy Techniques and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Electron Microscopy Techniques and Applications

Life Sciences → Biochemistry, Genetics and Molecular Biology → Structural Biology

Atomic defects generated by hydrogen on Si(110) surface as revealed by scanning tunneling microscopy

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