Germanium nanowire transistors with ethylene glycol treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) contacts

Abstract

Germanium nanowires (Ge NWs) were synthesized via the supercritical fluid-liquid-solid (SFLS) process, followed by surface passivation with isoprene. The Ge NWs were then drop cast from ethanol suspension onto SiO2∕Si substrates. Conductivity-enhanced poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) with ethylene glycol treatment was employed as the source-drain electrodes. The field-effect mobility of Ge nanowire field-effect transistors was as high as 7.0cm2∕Vs, with a p-type response similar to Pt-electrode devices previously reported for SFLS-grown Ge NWs. The organic based contacts provide a potential platform for inexpensive production of flexible nanowire devices.