Sharp line injection luminescence from InP quantum dots buried in GaInP

Abstract

InP quantum dots embedded in Ga0.5In0.5P are investigated by injection luminescence. By using a masking technique we have improved the spatial resolution. At 77 K, the luminescence peak of the fully formed InP dots occurs at about 1.62 eV. In addition, in the 1.7–1.8 eV energy range, we observe a rich structure in the spectra with several sharp lines typically 3 meV in width. The origin of this luminescence is attributed to the partially formed InP quantum dots. This injection luminescence band also exhibits spatial variations both in the envelope as well as in the fine structure.