JOURNAL ARTICLE

Structural changes in chemical solution deposited lanthanum doped bismuth ferrite thin films

V. R. SinghAshish GargD. C. Agrawal

Year: 2008 Journal:   Applied Physics Letters Vol: 92 (15)   Publisher: American Institute of Physics

Abstract

Here, we report on the lanthanum (La) doping induced structural changes in chemical solution grown Bi1−xLaxFeO3 (0.0⩽x⩾0.30) thin films on indium tin oxide coated glass substrates and influence on film’s properties. Films show gradual structural changes from rhombohedral towards a pseudocubic structure as the La content increases, also evident from changes in the lattice constant and disappearance of peak splitting upon increasing the doping level. This was also accompanied by an increase in the dielectric constant, magnetization and a marginal decrease in the leakage current density up to x=0.20 followed by a reverse trend at higher doping levels.

Keywords:
Lanthanum Doping Materials science Thin film Dielectric Bismuth Lattice constant Indium Inorganic chemistry Analytical Chemistry (journal) Metallurgy Nanotechnology Chemistry Optics Optoelectronics

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Citation History

Topics

Multiferroics and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Magneto-Optical Properties and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
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