Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

Abstract

In this paper, we demonstrate Schottky barrier height adjustment of Nickel-Germanosilicide (NiSiGe) contact on Si0.7Ge0.3 by controlling the As+ implants at the NiSiGe/Si0.7Ge0.3 interface. Various dosage of As+ was implanted into both n- and p- type Si0.7Ge0.3 to demonstrate the control of effective barrier height. Electrical characterization shows ohmic contact can be achieved for NiSiGe on n-Si0.7Ge0.3. We use 2-D XRD to confirm presence of NiSiGe phase and TOF-SIMS to confirm the segregation of As+ doping at the contact-semiconductor interface.