Integrated circuits using top-gate ZnO nanowire transistors with ultrathin organic gate dielectric

Abstract

We report on field-effect transistors based on single-crystalline ZnO nanowires with a diameter of about 50 nm grown by wet-chemical synthesis. The as-grown nanowires have a large conductivity that makes it difficult to control the drain current with the gate field, but the conductivity is greatly reduced by a post-growth anneal at 600°C. Using a solution-processed organic gate dielectric with a thickness of 2.1 nm and overlapping metal top gate electrodes patterned by electron-beam lithography we have prepared nanowire transistors with good static performance. By patterning more than one transistor on the same nanowire we have also prepared simple logic circuits on a single nanowire.