Electrochemical carbon nanotube field-effect transistor

Abstract

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|≈0.3–0.5 eV, corresponding to a doping level of ≈1013 cm−2. Hole-doping increases in the electrolyte.