High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Gang Xu; A. Salvador; A. Botchkarev; W. Kim; Chao Lu; He Tang; H. Morkoç̌; Gary M. Smith; Michael J. Estes; Tung Huu Dang; P. Wolf

doi:10.4028/www.scientific.net/msf.264-268.1441

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High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Gang Xu A. Salvador A. Botchkarev W. Kim Chao Lu He Tang H. Morkoç̌Gary M. Smith Michael J. Estes Tung Huu Dang P. Wolf

Year: 1998 Journal: Materials science forum Vol: 264-268 Pages: 1441-1444 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/msf.264-268.1441

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Keywords:

Materials science Photodetector Optoelectronics Ultraviolet Noise (video) Wide-bandgap semiconductor Gallium nitride Nanotechnology Layer (electronics) Computer science

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

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