Niclas LindvallAlexey KalabukhovA. Yurgens
We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.
Yu ZhangLianqing LiuNing XiYuechao WangZaili Dong
Bin ShiDongxian ZhangHaijun ZhangQing Sang
Fei HuiPujashree VajhaYanfeng JiChengbin PanEnric Grustan‐GutierrezHuiling DuanPeng HeGuqiao DingYuanyuan ShiMario Lanza
A. J. M. GiesbersU. ZeitlerSoeren NeubeckFrank FreitagKostya S. NovoselovJ. C. Maan